MJE / MJE NPN Silicon Power Transistors. These devices are designed for high-voltage, high-speed power switching inductive circuits where. Characteristics of the MJE bipolar transistor. Type – n-p-n; Collector-Emitter Voltage: V; Collector-Base Voltage: V; Emitter-Base Voltage: 9 V. Taiwan Semiconductor Bipolar Transistors – BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Taiwan.
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