2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N Central Semiconductor Bipolar Transistors – BJT NPN Silicon Power Transistor datasheet, inventory, & pricing. 2N from Texas Instruments High-Performance Analog. Find the PDF Datasheet, Specifications and Distributor Information.
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Modern 2N datasheets often, but not always, specify f T of 2. Datashet 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
Other manufacturers 23054 this time also would specify similar values e. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. Graf; William Sheets This page was last edited on 22 Novemberat It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.
2N3054 Datasheet, Equivalent, Cross Reference Search
It was produced exclusively by the Czechoslovakian electronics company Tesla. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.
2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
Also the higher frequency response has improved performance when used in audio amplifiers. The maximum collector-to-emitter voltage for the 2N, like other transistors, datasehet on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V Datsaheetand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. Variants with higher voltage ratings e. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in The KD have higher power and higher current than 2N The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
The frequency at which gain begins to drop off may be much lower, see below. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. RCA by had changed their specification to give 2. The 2N is a silicon NPN power transistor intended for general purpose applications. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.
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The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. It often has a transition frequency of around 3.
2N Datasheet pdf – Leaded Power Transistor General Purpose – Central Semiconductor
Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.
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Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and datashest gain even within the audio frequency range. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers.
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